inchange semiconductor isc product specification isc silicon npn power transistor 2sd649 description high breakdown voltage- : v cbo = 1500v (min) high reliability applications designed for line-operated horiz ontal deflection output applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 1500 v v ces collector-emitter voltage 1500 v v ebo emitter-base voltage 5 v i c collector current- continuous 3 a i cp collector current-pulse 5 a p c collector power dissipation @ t c 90 35 w t j junction temperature 130 t stg storage temperature range -65~130 isc website www.iscsemi.cn www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2sd649 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ebo emitter-base breakdown voltage i e = 10ma; i c = 0 5 v v ce (sat) collector-emitter saturation voltage i c = 3a; i b = 1a b 7.0 v v be (sat) base-emitter saturation voltage i c = 3a; i b = 1a b 1.5 v v cb = 750v ; i e = 0 100 a i cbo collector cutoff current v cb = 1500v ; i e = 0 1 ma h fe dc current gain i c = 3a; v ce = 10v 4 12 t f fall time 1 s t stg storage time i c = 3a, i b end = 1a, l b = 20 h 13 s isc website www.iscsemi.cn 2 www.iscsemi.cn
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